Alloy scattering limitation on the mobility of holes in p-type GaAs1-xSbx
نویسنده
چکیده
The hole mobilities in the GaAs1-xSbx system is been investigated for 0.0 ≤ x ≤ 1.0. Undoped room temperature mobilities are used to examine the scattering as a function of the Sb content. Two scattering mechanisms are considered: ionised impurity and alloy scattering. The alloy scattering potential is found to be 1.868 eV, which is about twice the theoretical value. Samples of various doping levels are also used, from undoped to heavily doped, to examine the temperature dependence of the mobility. The van der Pauw-Hall method is employed to determine the mobility at temperatures ranging from 4.2 K to 320 K. Three scattering mechanisms are considered: ionised impurity, lattice, alloy, and surface charge scattering. Surface charge scattering is found to be negligible, but lattice scattering is important at high temperatures. Ionised impurity scattering is dominant at low temperatures, where two forms for it are found: one for non-degenerate semiconductors, and one for degenerate semiconductors. The alloy scattering potential is determined for each of the samples, and lies in the range of 1.3 to 1.6 eV. This is also larger than the theoretical value. The discrepancies in the alloy scattering potentials may be attributed to not considering deformation potential scattering, which may be significant for these samples.
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